Toshiba announces major investment in power devices business
Mass production on the new line will start in the first half of fiscal year 2023
Power devices are essential components for managing and reducing power consumption by vehicles and industrial and other electrical equipment. Growth in the e-vehicle, factory automation and renewable energy sectors continues to drive demand growth for power devices.
Toshiba has until now met demand by expanding production capacity on a 200mm wafer facility at Kaga Toshiba Electronics Corporation.
The company will construct the new 300mm facility in a building on the same site that currently houses a 200mm line. The new 300mm line will be used to manufacture low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Toshiba will make decisions on further investments to increase output in line with market conditions. It will also continue to expand production of discrete semiconductors, including power devices, at Japan Semiconductor Corporation, a manufacturing subsidiary that mainly produces system LSIs. ■